H2  plasma treatment

ABSTRACT

Electronic devices are constructed by a method that includes forming a first conductive layer in an opening in a multilayer dielectric structure supported by a substrate, forming a core conductive layer on the first conductive layer, subjecting the core conductive layer to a H 2  plasma treatment, and depositing a capping adhesion/barrier layer on the core conductive layer after the H 2  plasma treatment. The multilayer dielectric structure provides an insulating layer for around the core conducting layer and at least one sacrificial layer for processing. The H 2  plasma treatment removes unwanted oxide from the surface region of the core conducting layer such that the interface between the core conducting layer and the capping adhesion/barrier is substantially free of oxides. In an embodiment, the core conducting layer is copper with a titanium nitride or zirconium capping adhesion/barrier layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is related to commonly assigned U.S. patentapplication, Ser. No. 10/414,147, filed on 15 Apr. 2003, now U.S. Pat.No. 6,740,392, entitled “Improved Surface Barriers for Copper and SilverInterconnections Produced by a Damascene Process,” which is herebyincorporated by reference in its entirety.

TECHNICAL FIELD

This application relates generally to semiconductor devices and devicefabrication, and more specifically to fabricating metals in a damascenestructure.

BACKGROUND

One of the main problems confronting the semiconductor processingindustry, in the ULSI age, is that of capacitive-resistance loss in thewiring levels. This has led to a large effort to reduce the resistanceof and lower the capacitive loading on wiring levels. Since itsbeginning, the industry has relied on aluminum and aluminum alloys forwiring. In a like manner, the industry has mainly relied on SiO₂ as theinsulator of choice, although polyimide was used in a number of productsby IBM, for a number of years. The capacitive resistance problem growswith each succeeding generation of technology.

To improve the conductivity, it has been suggested to substitute copper,silver or gold metallurgy for the aluminum metallurgy now being used.Several potential problems have been encountered in the development ofthese proposed metallurgies. One problem is the fast diffusion of copperthrough both silicon and SiO₂. This problem, along with the knownjunction poising effects of copper and gold, have led to proposals touse a liner to separate these metallurgies from an SiO₂ insulator. Theseapproaches, however, do not fully resolve problems associated withdecreasing minimum line size and decreasing liner size. The combinationof the shrinking line size in the metal line and the decreasing linersize increases both the capacitance and resistance.

With respect to capacitive loading effects, studies have been conductedthat considered employing various polymers such as fluorinatedpolyimides as possible substitutions for SiO₂ insulators. Several ofthese materials have dielectric constants considerably lower than SiO₂.However, as in the case of SiO₂, an incompatibility problem with coppermetallurgy has been found. In the case of polyimide, and many otherpolymers, it has been found that the polymer, during curing, reacts withcopper during the curing process, forming a conductive oxide CuO₂, whichis dispersed within the polymer. See, D. J. Godbey et al., InternationalConference on Metallurgical Coatings and Thin Films, San Diego, Calif.,Abstract H2.04, pg. 313 (Apr. 21–25, 1997). This conductive oxide thenraises the effective dielectric constant of the polymer and in manycases increases the polymers conductivity.

Various approaches using copper and other metals in SiO₂ and polymerinsulators have been implemented to improve the properties of theelectrical interconnects. However, these electrical characteristics areimpaired when an oxide is formed at or near the surface of theelectrical interconnect. Thus, structures and methods are needed whichalleviate the problems associated with via and metal line fabricationprocesses.

SUMMARY

The above mentioned problems are addressed by the present invention andwill be understood by reading and studying the following specification.An embodiment for a method for forming an electronic device includesforming a first conductive layer in an opening in a multilayerdielectric structure supported by a substrate, forming a core conductivelayer on the first conductive layer, subjecting the core conductivelayer to a H₂ plasma treatment, and depositing a cappingadhesion/barrier layer on the core conductive layer after the H₂ plasmatreatment. In an embodiment, the multilayer dielectric structureprovides an insulating layer around the core conducting layer and atleast one sacrificial layer for processing. The H₂ plasma treatmentremoves unwanted oxide from the surface region of the core conductinglayer such that the interface between the core conducting layer and thecapping adhesion/barrier is substantially free of oxides. In anembodiment, the core conducting layer is copper with a titanium nitrideor zirconium capping adhesion/barrier layer.

These and other aspects, embodiments, advantages, and features willbecome apparent from the following description and the referenceddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A–1H illustrate elements for an embodiment of a process to formmetallizations, according to various embodiments of the presentinvention.

FIGS. 2A–2I illustrate elements for another embodiment of a process toform metallizations, according to various embodiments of the presentinvention.

FIG. 3A shows an embodiment of a process element for forming awiring/metallization structure, according to the teachings of thepresent invention.

FIG. 3B shows another embodiment of a process element for forming awiring/metallization structure, according to the teachings of thepresent invention.

FIG. 4 is a simplified block diagram of a memory device using anembodiment for a wiring structure according to the teachings of thepresent invention.

FIG. 5 illustrates a block diagram for an embodiment of an electronicsystem having devices using a wiring structure according to theteachings of the present invention.

DETAILED DESCRIPTION

The following detailed description refers to the accompanying drawingsthat show, by way of illustration, specific aspects and embodiments inwhich the present invention may be practiced. These embodiments aredescribed in sufficient detail to enable those skilled in the art topractice the present invention. Other embodiments may be utilized andstructural, logical, and electrical changes may be made withoutdeparting from the scope of the present invention. The variousembodiments disclosed herein are not necessarily mutually exclusive, assome disclosed embodiments can be combined with one or more otherdisclosed embodiments to form new embodiments.

The terms wafer and substrate used in the following description includeany structure having an exposed surface with which to form an integratedcircuit (IC). The term substrate is understood to include semiconductorwafers. The term substrate is also used to refer to semiconductorstructures during processing, and may include other layers that havebeen fabricated thereupon. Both wafer and substrate include doped andundoped semiconductors, epitaxial semiconductor layers supported by abase semiconductor or insulator, as well as other semiconductorstructures well known to one skilled in the art.

The term “horizontal” as used in this application is defined as a planeparallel to the conventional plane or surface of a wafer or substrate,regardless of the orientation of the wafer or substrate. The term“vertical” refers to a direction perpendicular to the horizontal asdefined above. Prepositions, such as “on”, “side” (as in “sidewall”),“higher”, “lower”, “over” and “under” are defined with respect to theconventional plane or surface being on the top surface of the wafer orsubstrate, regardless of the orientation of the wafer or substrate. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the appended claims, along with the full scope of equivalents towhich such claims are entitled.

In various embodiments, an electronic device using layeredmetallizations in a wiring structure is produced by a method thatincludes forming within an insulator a conductive structure having acore conductor layer on a first conducting layer and a capping adhesionand/or barrier (adhesion/barrier) layer on the core conductor layer,where the capping adhesion/barrier layer is formed on the core conductorlayer after subjecting the core conductor layer to a H₂ plasmatreatment. Subjecting the core conductor layer to a H₂ plasma treatmentprior to forming the capping adhesion/barrier layer provides aninterface between the core conductor and the capping adhesion/barrierthat is substantially free of an oxide. As a result, the conductivestructure can provide improved metallizations for an integrated circuitin which the surface of the metallization layer is substantially free ofan oxide or sub-oxide. In an embodiment, the first conducting layerincludes an adhesion/barrier layer and a seed layer. In a furtherembodiment, the structure produced may be an air bridge. In anembodiment, the insulator is a polyimide layer. In another embodiment,the insulator is an oxide layer. In an embodiment, the core conductinglayer is a copper layer.

The use of a copper conductor along with a barrier/liner layer providessignificant improvement in conductivity over a Ti/AlCu/Ti sandwichstructure now in widespread use in the microelectronics industry.However, as the line width decreases even a thin liner has a significanteffect on the composite line resistance. As minimum dimensions shrink,the use of even a twenty angstrom layer of an alloy with higherresistivity will have a significant effect on the total resistivity ofthe conductor composite. See, P. C. Andricacos, The ElectrochemicalSociety Interface, pp. 32–37, (Spring 1999).

It has also been shown that there is a significant difference betweenthe amount of copper oxide that is formed when a polyimide insulator isused if the acidity of the polymer solution is low, i.e., if theprecursor used in the formation of the polyimide is an ester instead ofan acid. In the case of PI-2701, which is a photosensitive polyimidethat starts from an ester precursor, the amount of oxide formed isreduced by a factor of approximately four as compared to films with asimilar final chemistry, prepared from an acid precursor. It is thoughtthat the slight acidity of PI-2701 may come from the photo-pac or theprocess used to form it.

The use of Ti as a barrier layer was found to increase the resistivityof a Cu film significantly when heat-treated at temperatures of 350° C.or above. However, if the heat-treatment was carried out in hydrogen noincrease in resistivity was reported. As this temperature is above theeutectoid temperature of the TiH system, the formation of TiH is assumedto have occurred. A similar increase in resistivity was reported tooccur with Zr-containing and Hf-containing copper alloys. See, S. P.Muraka et al., SPIE, vol. 2335, pp. 80–90. From the equilibrium phasediagrams of the Cu—Ti and Cu—Zr systems, it can be seen that thesolubility of Zr in Cu is more than ten times less than that of Ti.

In addition to copper, gold and silver also offer lower resistivitiesthan aluminum. These materials also have a significantly lower adhesionto oxides than aluminum. These materials as well as aluminum haverelatively poor adhesion to polymers. Processes that offer significantimprovements to the barrier adhesion art for the bottom and the sidewalldamascene or dual damascene structures are provided by the presentinventor in U.S. Pat. No. 6,376,370 issued 23 Apr. 2002, U.S. Pat. No.6,420,262 issued 30 Jul. 2002, U.S. Pat. No. 6,426,289 issued 16 Jul.2002, and U.S. patent application Ser. No. 10/414,147, filed on 15 Apr.2003, now U.S. Pat. No. 6,740,392, which are hereby incorporated byreference.

In various embodiments according to the teachings of the presentinvention, the formation of a capping adhesion/barrier layer on the topsurface of a damascene metal is preceded by subjecting the top surfaceof the damascene metal to a H₂ plasma treatment. This eliminates orsubstantially reduces the probability of forming an oxide or sub-oxideon the top surface of the core conductor of the damascene metal betweenthe time that the core conductor is deposited and the time that thecapping adhesion/barrier layer is formed. The formation of such an oxideor sub-oxide would decrease the adhesion of the top barrier to theunderlying metallurgy, and also increase the resistivity of theinterface.

In embodiments according to the present invention, methods in adamascene process provide for eliminating or substantially reducing toplayer oxides or sub-oxides without increasing a capping adhesion/barrierthickness. Prior to the deposition of the capping adhesion/barrier, aH₂-containing plasma is used to reduce the metal oxides on the topsurface. The plasma treatment may either be performed in the depositionchamber in which the capping adhesion/barrier layer is formed or in aseparate chamber of a multi-chamber deposition system. In an embodiment,conductive material is deposited to form a capping adhesion/barrierlayer by a low energy ion implant. The ion implant energy employedprovides depositing the bulk of the implanted material in the top fewatomic layers. The resulting structure can be exposed to anitrogen-containing plasma or to an elevated temperature nitrogentreatment, forming a conducting nitride layer on the metal surfaces.

FIGS. 1A–1H illustrate elements for an embodiment of a process to formmetallizations for an electronic device at various processing stages.FIG. 1A illustrates a portion of an integrated circuit structure, namelyan integrated circuit having a number of semiconductor devices formed ina substrate. FIG. 1A further illustrates the structure after a devicestructure is formed in the substrate and the contact structure to thedevice structure is in place. One of ordinary skill in the art willunderstand upon reading this disclosure the manner in which a number ofsemiconductor structures, e.g. transistors, can be formed in asubstrate. For example, FIG. 1A illustrates the structure after a numberof device structures, e.g. transistor 101A and 101B are formed in thesubstrate 100. An insulator layer 102 is deposited over the number ofsemiconductors 101A and 101B. In an embodiment, insulator layer 102includes a field oxide 102A and a layer 102B of Si₃N₄. In an embodiment,insulator layer 102 includes a layer of Si₃N₄ having a thickness ofabout 100 Angstroms (Å). This insulator layer will also serve as anadditional barrier to impurities coming from subsequent processingsteps.

Contact holes 105A and 105B are opened to the number of devicestructures 101A and 101B using a techniques that are known to thoseskilled in the art. In an embodiment, TiN layers 106A, 106B aredeposited followed by deposition of tungsten layers 107A, 107B by aprocess such as chemical vapor deposition (CVD) to form contact plugs.Other conducting materials may be used. Excess tungsten and TiN areremoved from the Si₃N₄ surface by chemical mechanical planarization(CMP) or other suitable processes to form a planarized surface 109.

As shown in FIG. 1B, a multilayer dielectric structure having a lowerinsulator layer 108, an intermediate dielectric layer 103, and a topdielectric layer 104 is deposited over the wafer surface. In anembodiment, each layer 108, 103, 104 is deposited independently over thewafer surface. Lower insulator 108 will provide the insulating layer inwhich a conducting structure will be formed, while intermediatedielectric layer 103 and top dielectric 104 provide sacrificial layersfor the fabrication process. In an embodiment, lower insulator layer 108is deposited over the Si₃N₄ layer 102B and the contact plugs formed invias 105A, 105B. Lower insulator layer 108 is deposited with a thicknessequal to the wiring at that level.

In an embodiment, lower insulator layer 108 is a polymer, a fluorinatedpolymer, or a foamed polymer. A polymer layer 108 can be depositedusing, for example, the process and material disclosed in U.S. Pat. No.6,284,656 issued 4 Sep. 2001, hereby incorporated by reference.Following deposition of a polymer, it is cured. In an embodiment, lowerinsulator layer 108 includes a polyimide layer, a fluorinated polyimidelayer, or a foamed polyimide layer. In an embodiment, lower insulator108 is a polyimide layer applied to surface 109 such that when cured itwill have sufficient thickness to equal the thickness for a first wiringlevel. Polyimide layer 108 may be converted to a foamed polyimide by amethod, for example, that uses a supercritical fluid as described inU.S. Pat. No. 6,077,792 issued 20 Jun. 2000, hereby incorporated byreference.

In an embodiment, a low temperature oxide is deposited as intermediatelayer 103 having a thickness of about 500 Å. A layer of Si₃N₄ having athickness of about 500 Å is deposited as top dielectric 104 onintermediate layer 103. Other thicknesses may be used. A thin layer ofresist is applied to top dielectric layer 104. The required damasceneimages are etched in the oxide layer 103 and the nitride layer 104. Todefine trenches in polyimide layer 108, an O₂ reactive ion etching (RIE)process is used, which also removes the thin resist layer. Thuspolyimide layer 108, or lower insulator 108, is patterned to define atrench 110, or a number of trenches, in the lower insulator layer 108providing an opening to first level vias, 107A and 107B, or a number ofvias, in planarized surface 109. The structure is now as appears in FIG.1C.

As shown in FIG. 1D, an adhesion/barrier layer 114 is deposited intrench 110, or the number of trenches, using a low energy ionimplantation. In an embodiment, adhesion/barrier layer is formed byanother method such as by CVD. In an embodiment, adhesion/barrier layer114 includes a layer of zirconium having a thickness of approximately 5to 100 Å. In alternate embodiments, adhesion/barrier layer 114 includesa layer of titanium and/or hafnium. In one embodiment, layer 114 ofzirconium has a thickness of approximately 50 Å. This can be achievedusing a 10¹⁷ ion implant of zirconium, i.e. 10¹⁷ ions of zirconium persquare centimeter (cm²). In an embodiment, the layer of zirconium 114 isimplanted at 100 electron volts (eV) into the surface of the trenches110 in polymer layer 108 using a varying angle implant (α), asrepresented by arrows 111, where the angle of implantation is changedfrom normal to the wafer surface to 15 degrees off normal. As one ofordinary skill in the art will understand upon reading this disclosure,using a varying angle implant, where an angle of implantation is changedfrom normal to planarized surface 109 to approximately 15 degrees offnormal, deposits adhesion/barrier layer 114 on all surfaces in trench110, or in the number of trenches. Also, in forming adhesion/barrierlayer 114, various refractory metals can be employed, such as tantalum,tungsten, molybdenum, hafnium, niobium, rhenium, osmium, ruthenium,zirconium, titanium, vanadium, chromium and manganese. In variousembodiments, alloys of Ta or W with N or with certain polyimides, inparticular, those formed from the ester of Zr, TI or Hf; are employed.The structure is now as appears in FIG. 1D.

In FIG. 1E, a seed layer 116 is deposited on adhesion/barrier layer 114.In an embodiment, seed layer is deposited using a low energy ionimplantation at energies ranging from 100 electron volts (eV) to 2000electron volts (eV). In another embodiment, seed layer is deposited byCVD. In various embodiments, seed layer 116 on adhesion/barrier layer114 includes a layer of aluminum, copper, silver, or gold. Seed layer116 serves as a catalyst or base metal for subsequent electrolessplating or electroplating of a core conducting layer and as an adhesionlayer preventing delamination of subsequently electrolessly deposited orelectroplated metal. In various embodiments, seed layer 116 includes alayer of one or more refractory metals such as tantalum, tungsten,molybdenum, hafnium, niobium, rhenium, osmium, ruthenium, zirconium,titanium, vanadium, chromium and manganese. In an embodiment, a copperseed layer is utilized for a core conducting layer of copper. In anembodiment, seed layer 116 includes a layer of copper having a thicknessof approximately a 100 Å. This can be achieved using an 8×10¹⁶ ionimplant of copper using a low energy ion implantation. The resultingstructure is shown in FIG. 1E.

After seed layer 116 is deposited, Si₃N₄ layer 104 is removed using aselective etch. An etchant is selected that negligibly attacks polyimidelayer 108 and oxide layer 103. The selective etch also removes seedlayer 116 and adhesion/barrier layer 114 from all areas except in thetrench 110. Alternately, seed layer 116 and adhesion/barrier layer 114along with silicon nitride layer 104 may be removed from the surface bya chemical mechanical planarization (CMP) process stopping on the oxidelayer 103. The structure is now as shown in FIG. 1F.

In FIG. 1G, a core conducting layer 120, or a number of first levelmetal lines 120, is deposited over the seed layer 116 in trench 110, orin a number of trenches. Core conducting layer, or number of first levelmetal lines 120, is a layer substantially of aluminum, copper, silver,or gold depending on the type of seed layer 116 deposited. Coreconducting layer 120 is electrolessly plated into trench 110 on seedlayer 116 to a thickness which causes core conducting layer 120 toextend to about the level of a top surface 119 of polyimide layer 108.Electroless metal deposition is attractive due to low processing costsand high quality metal deposits. In addition, equipment for performingelectroless metal deposition is relatively inexpensive compared to othersemiconductor processing equipment for depositing metals. Electrolessdeposition also provides for batch processing wafers, thereby furtherreducing cost and increasing production throughput. In an embodiment,copper is electroless plated onto seed layer 116. In an embodiment,forming conductive layer 120 includes electroless plating copper in anambient air environment. Electroless copper plating is used to depositsufficient copper to fill trench 110, or a number of trenches, to topsurface 119 of polyimide insulator layer 108.

Core conducting layer 120 is subjected to a H₂ plasma treatment. Thisremoves unwanted oxide from the surface of core conducting layer 120.With respect to FIG. 1H, the surface of core conducting layer 120 isthen implanted with material to form a capping adhesion/barrier layer122 to prevent metal contamination. In various embodiments, the cappingis a material such as aluminum, boron, chromium, molybdenum, tungsten,titanium, zirconium, hafnium, magnesium, vanadium, columbium, ortantalum or oxides or nitrides of these elements. In an embodiment, coreconducting layer is copper and the dopant is zirconium. The zirconium isimplanted at an energy level of about 0.125 keV to 2.0 keV and at aconcentration of about 1.25×10¹⁶ ions/cm² to about 2.0×10¹⁷ ions/cm². Inan embodiment, the zirconium is implanted at an energy of about 0.5 keVand at a concentration of about 5×10¹⁶ ions/cm². In other embodimentsusing other dopants, the implant energy and the concentration can rangefrom about 0.125 to about 2.0 keV and from about 1.25×10¹⁶ to about2.×10¹⁷ ions/cm², respectively. In an embodiment, cappingadhesion/barrier layer ranges from about 5 Å to about 40 Å thick. In anembodiment, capping adhesion/barrier layer is around 20 Å thick.

Oxide layer 103 is removed by a etch which attacks oxide but has no ornegligible effect on polyimide. This removes the capping layer from allareas except on core conducting layer 120. In an embodiment, this etchremoves zirconium from all areas except from capping adhesion/barrierlayer 122 on copper core conducting layer 120. The resulting cappingadhesion/barrier layer 122 can be utilized in an interconnect system foran integrated circuit coupling passive and/or active components such ascapacitors, transistors and various memory devices. The resultingstructure is shown in FIG. 1H.

The formation of the metallization structure as discussed with respectto FIGS. 1A–1H describes a single damascene structure, otherimplementations using dual damascene can be constructed usingappropriate masking steps. The process is then repeated as many times asnecessary to build the multi-level wiring layers desired. Depending uponthe temperatures used in the processes for applying and curing thepolymers as well as depositing the resist stack, a final post processingheat-treatment of about250° C. to about 350° C. for about one hour toabout two hours may be used to reduce the resistivity of the conductorsin the wiring structure. If an air bridge structure is desired all or aportion of the polymer insulation can be removed by subjecting thecompleted structure, or a portion thereof, to an oxygen plasmatreatment.

FIGS. 2A–2I illustrate elements for another embodiment of a process toform metallizations for an electronic device at various processingstages. FIG. 2A illustrates a portion of an integrated circuitstructure, namely an integrated circuit having a number of semiconductordevices formed in a substrate. FIG. 2A further illustrates the structureafter a device structure is formed in the substrate and the contactstructure to the device structure is in place. For example, FIG. 2Aillustrates the structure after a number of device structures, e.g.transistor 201A and 201B are formed in the substrate 200. An insulatorlayer 202 is deposited over the number of semiconductors 201A and 201B.In an embodiment, insulator layer 202 includes a field oxide 202A and alayer 202B of Si₃N₄. Si₃N₄ layer 202B may be formed on or below fieldoxide 202A. In an embodiment, insulator layer 202 includes a layer ofSi₃N₄ having a thickness of about 100 Å. This insulator layer will alsoserve as an additional barrier to impurities coming from subsequentprocessing steps.

Contact holes 205A and 205B are opened to the number of devicestructures 201A and 201B using a techniques that are known to thoseskilled in the art. In an embodiment, TiN layers 206A, 206B aredeposited followed by deposition of tungsten layers 207A, 207B by aprocess such as chemical vapor deposition (CVD) to form contact plugs.Other metals may be employed to form contact plugs. Excess tungsten andTiN are removed from the Si₃N₄ surface by chemical mechanicalplanarization or other suitable processes to form a planarized surface209.

As shown in FIG. 2B, a multilayer dielectric structure having a lowerinsulator layer 208 and a top dielectric layer 204 is deposited over thewafer surface. In an embodiment, each layer 208, 204 is depositedindependently over the wafer surface. Lower insulator 208 will providethe insulating layer in which a conducting structure will be formed,while top dielectric 204 provides a sacrificial layer for thefabrication process. In an embodiment, lower insulator layer 208 isdeposited over the Si₃N₄ layer 202B and the contact plugs formed in vias205A, 205B. Lower insulator layer 208 is deposited with a thicknessequal to the wiring at that level.

In an embodiment, lower insulator layer 208 is a oxide, a fluorinatedoxide, or an aerogel. In an embodiment, lower insulator layer 208 is asilicon oxide layer. In an embodiment, lower insulator layer 208 is asilicon dioxide layer. Referring to FIG. 2B, lower insulator layer 208having a top surface 219 is deposited with a thickness equal to thewiring at that level. In an embodiment, a layer of Si₃N₄ having athickness of about 500 Å is deposited as top dielectric 204 on lowerinsulator layer 208. Other thicknesses may be used. A thin layer 203 ofresist is applied to Si₃N₄ layer 204.

The required damascene images are etched in the resist 203 and thenitride layer 204. To define trenches in oxide layer 208, an oxide etchis used, which also removes the remaining resist layer. Thus oxide layer208, or lower insulator 208, is patterned to define a trench 210, or anumber of trenches, in the oxide layer 208 providing an opening to firstlevel vias, 207A and 207B, or a number of vias, in planarized surface209. The structure is now as appears in FIG. 2C.

As shown in FIG. 2D, an adhesion/barrier layer 214 is deposited intrench 210, or in the number of trenches, using a low energy ionimplantation. In an alternate embodiment, adhesion/barrier layer isformed by another method such as by CVD. In an embodiment,adhesion/barrier layer 214 includes a layer of zirconium having athickness of approximately 5 to 100 Å. In alternate embodiments,adhesion/barrier layer 214 includes a layer of titanium and/or hafnium.In one embodiment, layer 214 of zirconium has a thickness ofapproximately 50 Å. This can be achieved using a 10¹⁷ ion implant ofzirconium, i.e. 10¹⁷ ions of zirconium per square centimeter (cm²). Inan embodiment, the layer of zirconium 214 is implanted at 100 electronvolts (eV) into the surface of the trenches 210 in the oxide layer 208using a varying angle implant (α), as represented by arrows 211, wherethe angle of implantation is changed from normal to the wafer surface to15 degrees off normal. Using a varying angle implant, where an angle ofimplantation is changed from normal to the planarized surface 209 toapproximately 15 degrees off normal deposits the adhesion/barrier layer214 on all surfaces in trench 210, or in the number of trenches. Also,in various embodiments, in forming the adhesion/barrier layer 214,refractory metals can be employed, such as tantalum, tungsten,molybdenum, hafnium, niobium, rhenium, osmium, ruthenium, zirconium,titanium, vanadium, chromium and manganese. In some embodiments, alloysof Ta or W with N, Zr, Ti, or Hf are employed. The structure is now asappears in FIG. 2D.

In FIG. 2E, a seed layer 216 is deposited on adhesion/barrier layer 214.In an embodiment, seed layer is deposited using a low energy ionimplantation at energies ranging from 100 electron volts (eV) to 2000electron volts (eV). In another embodiment, seed layer 216 is depositedby CVD. In various embodiments, seed layer 216 on adhesion/barrier layer214 includes a layer of aluminum, copper, silver, or gold. Seed layer216 serves as a catalyst or base metal for subsequent electrolessplating or electroplating of a core conducting layer and as an adhesionlayer preventing delamination of subsequently electrolessly deposited orelectroplated metal. In various embodiments, forming the seed layerincludes forming a layer of one or more refractory metals such astantalum, tungsten, molybdenum, hafnium, niobium, rhenium, osmium,ruthenium, zirconium, titanium, vanadium, chromium and manganese. In anembodiment, a copper seed layer is utilized for a core conducting layerof copper. In an embodiment, seed layer 216 includes a layer of copperhaving a thickness of approximately a 100 Å. This can be achieved usingan 8×10¹⁶ ion implant of copper using a low energy ion implantation. Thestructure is now as shown in FIG. 2E.

After seed layer 216 is deposited, if the fill is to be electroplating,the plating process is performed. Following electroplating the materialdeposited upon the surface of the wafer is removed, by chemicalmechanical polishing, stopping on the silicon nitride. If electrolessplating is to be used the seed/barrier layer deposited on the surface ofthe wafer is removed by chemical mechanical polishing stopping on thenitride layer. This removes portions of adhesion/barrier layer 214 andseed layer 216 that were deposited on the resist layer 203, leavingadhesion/barrier layer 214 and seed layer 216 extending only in thetrench 210 to approximately the level of the top surface of Si₃N₄ layer204 (top dielectric layer 204). The structure is shown in FIG. 2F. In analternate embodiment, when barrier and seed layers 214 and 216 areremoved, Si₃N₄ layer 204 is also removed.

In FIG. 2G, a core conducting layer 220, or a number of first levelmetal lines 220, has been deposited over seed layer 216 in trench 210,or in a number of trenches. Core conducting layer 220, or number offirst level metal lines 220, may be a layer of aluminum, copper, silver,or gold depending on the type of seed layer 216 deposited. Coreconducting layer 220 is electrolessly plated into trench 210 on seedlayer 216 to a thickness which causes the metal layer 220 to extend toabout the level of a top surface 219 of oxide layer 208. In anembodiment, copper is electroless plated onto seed layer 216. In anembodiment, forming conductive layer 220 includes electroless platingcopper in an ambient air environment. Electroless copper plating is usedto selectively deposit copper with a thickness slightly less than thethickness of oxide layer 208, that is, the nominal copper thickness plusthe deposition tolerance equals the thickness of oxide layer 208.

Core conducting layer 220 is subjected to a H₂ plasma treatment. Thisremoves unwanted oxide from the surface of core conducting layer 220.Referring to FIG. 2H, the surface of core conducting layer 220 is thenimplanted with dopant to form a capping adhesion/barrier layer 222 toprevent metal contamination. In various embodiments, the dopant is amaterial such as aluminum, boron, chromium, molybdenum, tungsten,titanium, zirconium, hafnium, magnesium, vanadium, columbium, ortantalum or oxides or nitrides of these elements. In an embodiment, coreconducting layer is copper and the dopant is titanium. Titanium isimplanted at an energy of about 0.5 keV and at a concentration of about5×10¹⁶ ions/cm², penetrating the copper core conducting layer 220 to anaverage depth of about 10 Å. In an embodiment, the titanium is implantedat an energy level of about 0.125 keV to 2.0 keV and at a concentrationof about 1.25×10¹⁶ ions/cm² to about 2.0×¹⁷ ions/cm⁵. In otherembodiments using other dopants, the implant energy and theconcentration can range from about 0.125 to about 2.0 keV and about1.25×10¹⁶ to about 2.×10¹⁷ ions/cm², respectively. In an embodiment,capping adhesion/barrier layer ranges from about 5 Å to about 40 Åthick. In an embodiment, capping adhesion/barrier layer is around 20 Åthick.

In a Ti ion implantation process in which Ti ions penetrate throughSi₃N₄ layer 204 and are implanted into oxide layer 204, a region ofdielectric material containing TiO, TiO₂, and/or TiO_(x) is formed inoxide layer 204. In an alternate process in which Si₃N₄ layer 204 isremoved when removing resist layer 203, during implanting into copperlayer 220 titanium is also implanted into oxide layer 208 at an averagedistance of about 20 Å using an implant energy of about 0.5 keV. Inother embodiments, the titanium is deposited using other depositionprocesses as alternatives to ion implantation.

Capping adhesion/barrier layer 222 may be exposed to a nitrogen to forma conducting nitride on core conducting layer 220. In an embodiment,titanium layer 222 is exposed to a nitrogen plasma at 350° C. to form aTiN layer 222 on copper core conducting layer 220. With a region ofoxide layer 204 containing TiO_(x), a nitrogen exposure process may forma region containing TiO, TiO₂, and/or a TiO(N)_(x). The structure withconducting layer 220 having capping adhesion/barrier layer 222 is shownin FIG. 2H. In an embodiment in which oxide layer 208 having implantedtitanium is exposed to nitrogen plasma, a TiO, TiO₂, and/or a TiO(N)_(x)layer is formed on oxide layer 208.

In embodiments in which Si₃N₄ layer 204 is present during formation ofcapping adhesion/barrier layer 222, Si₃N₄ layer 204 (top dielectriclayer 204) is then removed with negligible effect on oxide layer 208. Inan embodiment, Si₃N₄ layer 204 is removed by an etchant, such as hotphosphoric acid (H₃PO₄) at a temperature of about 180° C. at a etch rateof about 80 Å/min., which selectively attacks the top dielectric layer204 and not the oxide layer 208. Any TiN formed in Si₃N₄ layer 204 isremoved leaving first oxide layer 208 free of impurities (i.e. TiN). Inaddition, the remaining part of the conducting layer containingadhesion/barrier layer 214 and seed layer 216 not in contact with coreconducting layer 220 and capping adhesion/barrier layer 222 is removedalong with the removal of Si₃N₄ layer 204. This structure is shown inFIG. 21. The resulting core conducting layer 220 and cappingadhesion/barrier layer 222 can be utilized in an interconnect system foran integrated circuit coupling passive and/or active components such ascapacitors, transistors, various memory devices, and various electronicdevices and systems.

The formation of the metallization structure as discussed with respectto FIGS. 2A–2H describes a single damascene structure, otherimplementations using dual damascene can be constructed usingappropriate masking steps. The process is then repeated as many times asnecessary to build the multi-level wiring layers desired.

FIG. 3A shows an embodiment of a process element for forming awiring/metallization structure. FIG. 3A illustrates a multilayerdielectric structure 307 supported by a substrate 300 in which adamascene structure is formed. Multilayer dielectric structure 307includes a lower insulator layer 308, a intermediate dielectric layer303, and a top dielectric layer 304 disposed over a wafer surface. Lowerinsulator 308 will provide the insulating layer in which a conductingstructure will be formed, while intermediate dielectric layer 303 andtop dielectric 304 provide sacrificial layers for the fabricationprocess. In various embodiments, a number of different dielectrics canbe used to realize each of these layers 308, 303, 304. In an embodimentas shown in which FIG. 3A, the multilayer dielectric structure 307 isformed over a contact plug 302. In this embodiment, contact plug 302 hasat least a portion of its body above supporting substrate 300, ratherthan completely in a contact hole. From the stage of the process shownin FIG. 3A, an embodiment for a processing method includes forming afirst conductive layer in an opening that has been formed in themultilayer dielectric structure 307, forming a core conductive layer onthe first conductive layer, subjecting the core conductive layer to a H₂plasma treatment, and depositing a capping adhesion/barrier layer on thecore conductive layer after the H₂ plasma treatment. In an embodiment,lower insulating layer 308 is a polymer layer. The structure for anembodiment shown in FIG. 3A can be processed as previously described fora polymer insulating layer, including a polyimide insulating layer, withrespect to FIGS. 1B–1H.

FIG. 3B shows another embodiment of a process element for forming awiring/metallization structure. FIG. 3B illustrates a multilayerdielectric structure 317 supported by a substrate 310 in which adamascene structure is formed. Multilayer dielectric structure 317includes a lower insulator layer 318, and a top dielectric layer 314disposed over a wafer surface. Lower insulator 318 will provide theinsulating layer in which a conducting structure will be formed, whiletop dielectric 314 provides a sacrificial layer for the fabricationprocess. In various embodiments, a number of different dielectrics canbe used to realize each of these layers 318, 314. In an embodiment asshown in which FIG. 3B, the multilayer dielectric structure 317 isformed over a contact plug 312. In this embodiment, contact plug 312 hasat least a portion of its body above supporting substrate 310, ratherthan completely in a contact hole. From the stage of the process shownin FIG. 3B, an embodiment for a processing method includes forming afirst conductive layer in an opening that has been formed in themultilayer dielectric structure 317, forming a core conductive layer onthe first conductive layer, subjecting the core conductive layer to a H₂plasma treatment, and depositing a capping adhesion/barrier layer on thecore conductive layer after the H₂ plasma treatment. In an embodiment,lower insulating layer 318 is an oxide layer. The structure for anembodiment shown in FIG. 3B can be processed as previously described foran oxide insulating layer with respect to FIGS. 2B–2I.

FIG. 4 is a simplified block diagram of a memory device 400 using anembodiment for wiring structure according to the teachings of thepresent invention. Memory device 400 includes an array of memory cells402, address decoder 404, row access circuitry 406, column accesscircuitry 408, control circuitry 410, and input/output (I/O) circuit412. The memory is operably coupled to an external microprocessor 414,or memory controller for memory accessing. Memory device 400 receivescontrol signals from processor 414, such as WE*, RAS* and CAS* signals,which can be supplied on a system bus. Memory device 400 stores datathat is accessed via I/O lines. It will be appreciated by those skilledin the art that additional circuitry and control signals can beprovided, and that the memory device of FIG. 4 has been simplified tohelp focus on embodiments of the present invention. At least one of thestructures associated with memory device 400 uses a wiring structure ina substrate in accordance with an embodiment of the present invention.

It will be understood that the above description of a memory device isintended to provide a general understanding of the memory and is not acomplete description of all the elements and features of a specific typeof memory, such as DRAM (Dynamic Random Access Memory). Further,embodiments are equally applicable to any size and type of memorycircuit and are not intended to be limited to the DRAM described above.Other alternative types of devices include SRAM (Static Random AccessMemory) or Flash memories. Additionally, the DRAM could be a synchronousDRAM commonly referred to as SGRAM (Synchronous Graphics Random AccessMemory), SDRAM (Synchronous Dynamic Random Access Memory), SDRAM II, andDDR SDRAM (Double Data Rate SDRAM), as well as Synchlink or Rambus DRAMsand other emerging DRAM technologies.

FIG. 5 illustrates a block diagram for an embodiment of an electronicsystem 500 having devices using a wiring structure according to theteachings of the present invention. Electronic system 500 includes acontroller 505, a bus 515, and an electronic device 525, where bus 515provides electrical conductivity between controller 505 and electronicdevice 525. In various embodiments, controller 505 and/or electronicdevice 525 includes an embodiment for a wiring structure as discussedherein. In an embodiment, electronic system 500 includes a plurality ofelectronic devices using an embodiment for a wiring structure accordingto the present invention. Electronic system 500 may include, but is notlimited to, information handling devices, wireless systems,telecommunication systems, fiber optic systems, electro-optic systems,and computers.

Applying a H₂ plasma treatment to a core conducting layer in a damascenestructure prior to forming a capping adhesion/barrier layer on the coreconducting layer provides a method for removing unwanted oxides andsub-oxides from the surface of the core conducting layer. Electronicdevices and systems constructed having metallizations using such aprocess are provided with interconnection metallizations with enhancedconductivity properties. These enhanced conductivity (reducedresistivity) properties are provided in part by a interconnectionstructure in which the interface between the core conducting layer and acapping adhesion/barrier layer is substantially free of oxides.Embodiments for methods in line with the embodiments described hereinprovide for the use of highly conducting metals such as copper andsilver. In embodiments, these copper or silver structures are insulatedusing polymer layers or oxide layers that can be fabricated in a varietyof different forms such as, but not limited to, foamed materials orfluorinated materials.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. This application isintended to cover any adaptations or variations of the presentinvention. It is to be understood that the above description is intendedto be illustrative, and not restrictive. Combinations of the aboveembodiments, and other embodiments, will be apparent to those of skillin the art upon reviewing the above description. The scope of thepresent invention includes any other applications in which the abovestructures and fabrication methods are used. The scope of the presentinvention should be determined with reference to the appended claims,along with the full scope of equivalents to which such claims areentitled.

1. A method for forming an electronic device comprising: forming a firstconductive layer in an opening in a dielectric structure supported by asubstrate, the first conductive layer being an adhesion/barrier layer;depositing a seed layer on the first conductive layer; forming a coreconductive layer on the seed layer, the core conductive layersubstantially including one or more of aluminum, silver, or gold;subjecting the core conductive layer to a H₂ plasma treatment; anddepositing a capping layer on the core conductive layer after the H₂plasma treatment.
 2. The method of claim 1, wherein forming the firstconductive layer includes forming a layer of a refractory metal.
 3. Themethod of claim 1, wherein forming the first conductive layer includesforming a layer of a compound of nitrogen and a tantalum alloy or acompound of nitrogen and a tungsten alloy.
 4. The method of claim 1,wherein depositing the seed layer and the capping layer includesdepositing the seed layer and the capping layer using low energy ionimplantation.
 5. The method of claim 4, wherein depositing the seedlayer and the capping layer using low energy ion implantation includesusing an implant energy ranging from about 0.1 keV to about 2 keV. 6.The method of claim 1, wherein forming the core conductive layerincludes depositing the core conductive layer using a CVD process. 7.The method of claim 1, wherein forming the core conductive layerincludes forming the core conductive layer at a temperature ranging fromroom temperature to about 250° C.
 8. The method of claim 1, whereindepositing the capping layer includes depositing one or more materialsselected from titanium, zirconium, hafnium, or nitrides of theseelements.
 9. The method of claim 1, wherein depositing the capping layerincludes depositing the capping layer having a thickness ranging fromabout 5 Å to about 40 Å.
 10. The method of claim 1, wherein the methodfurther includes removing at least a portion of the dielectricstructure, after depositing the capping layer on the core conductivelayer, to form an air bridge structure.
 11. The method of claim 1,wherein forming the first conductive layer includes forming the firstconductive layer in the dielectric structure having multiple dielectricslayers, such that the core conductive layer is within one dielectriclayer in the dielectric structure.
 12. The method of claim 11, whereinforming the first conductive layer in the dielectric structure havingmultiple dielectrics layers includes forming the first conductive layerwithin an opening in a polymer layer, a foamed polymer layer, afluorinated polymer layer, a fluorinated oxide layer, or an aerogellayer.
 13. A method for forming an integrated circuit comprising:forming one or more device structures on a substrate; forming apolyimide layer above a number of first level vias provided forelectrical coupling to at least one of the one or more devicestructures; forming a number of trenches in the polyimide layer; forminga first conductive layer in the number of trenches, the first conductivelayer being an adhesion/barrier layer; depositing a seed layer on thefirst conductive layer; depositing a core conductive layer on the seedlayer, the core conductive layer substantially including one or more ofaluminum, silver, or gold; subjecting the core conductive layer to a H₂plasma treatment; and depositing a capping layer on the conductive layerafter the H₂ plasma treatment.
 14. The method of claim 13, whereinforming the first conductive layer includes forming a layer of arefractory metal.
 15. The method of claim 13, wherein forming the firstconductive layer includes forming a layer of a compound of nitrogen anda tantalum alloy or a compound of nitrogen and a tungsten alloy.
 16. Themethod of claim 13, wherein depositing the capping layer includesdepositing material by ion implantation into the core conductive layerto form the capping layer.
 17. The method of claim 13, whereindepositing the capping layer includes depositing one or more materialsselected from titanium, zirconium, hafnium, or nitrides of theseelements.
 18. The method of claim 13, wherein forming the polyimidelayer above a number of first level vias includes: forming a field oxidelayer and a Si₃N₄ layer above the one or more device structures; formingcontact holes through the field oxide layer and the Si₃N₄ layer;depositing TiN in the contact holes; forming tungsten on the TiN to forma contact plug; and applying the polyimide on the Si₃N₄ layer andcontact plug.
 19. The method of claim 13, wherein forming the number oftrenches in the polyimide layer includes: forming an oxide layer on thepolyimide layer; forming a layer of Si₃N₄ on the oxide layer; forming adamascene image in the oxide and Si₃N₄ layers; and removing polyimide atlocations of the damascene image.
 20. The method of claim 19, whereinthe method further including removing the layer of Si₃N₄ using aselective etch after forming the first conductive layer, and afterdepositing the capping layer subjecting the oxide layer to an etchantthat removes the oxide layer without substantially altering thepolyimide layer.
 21. The method of claim 13, wherein depositing the coreconductive layer includes selectively depositing aluminum.
 22. Themethod of claim 13, wherein depositing the core conductive layerincludes selectively depositing aluminum by plating in an ambient airenvironment.
 23. The method of claim 13, wherein depositing the cappinglayer on the core conductive layer includes implanting zirconium ionsinto the core conductive layer.
 24. The method of claim 13, whereinforming the polyimide layer includes forming a foamed polyimide, afluorinated polyimide, or a foamed fluorinated polyimide.
 25. The methodof claim 13, wherein the method further includes a heat treatment at atemperature ranging from 250° C. to about 350° C. for a period rangingfrom about one hour to about two hours after depositing the cappinglayer on the core conductive layer.
 26. The method of claim 13, whereinthe method further includes removing at least a portion of the polyimidelayer, after depositing the capping layer on the core conductive layer,to form an air bridge structure.
 27. A method for forming an integratedcircuit comprising: forming one or more device structures on asubstrate; forming a first oxide layer above a number of first levelvias for electrical coupling to at least one of the one or more devicestructures; forming a number of trenches in the first oxide layer;forming a first conductive layer in the number of trenches, the firstconductive layer being an adhesion/barrier layer; depositing a seedlayer on the first conductive layer; depositing a core conductive layeron the seed layer, the core conductive layer substantially including oneor more of aluminum, silver, or gold; subjecting the core conductivelayer to a H₂ plasma treatment; and depositing a capping layer on thecore conductive layer after the H₂ plasma treatment.
 28. The method ofclaim 27, wherein forming the first conductive layer includes forming alayer of a refractory metal.
 29. The method of claim 27, wherein formingthe first conductive layer includes forming a layer of a compound ofnitrogen and a tantalum alloy or a compound of nitrogen and a tungstenalloy.
 30. The method of claim 27, wherein depositing the capping layerincludes depositing material by ion implantation into the coreconductive layer to form the capping layer.
 31. The method of claim 27,wherein depositing the capping layer includes depositing one or morematerials selected from titanium, zirconium, hafnium, or nitrides ofthese elements.
 32. The method of claim 27, wherein forming the firstoxide layer above the device structures includes: forming a field oxidelayer and a Si₃N₄ layer above the one or more device structures; formingcontact holes through the field oxide layer and the Si₃N₄ layer;depositing TiN in the contact holes; forming tungsten on the TiN to forma contact plug; and forming the first oxide layer on the Si₃N₄ layer andcontact plug.
 33. The method of claim 27, wherein forming the number oftrenches in the first oxide layer includes: forming a layer of Si₃N₄ onthe first oxide layer; applying a layer of resist; forming a damasceneimage in the resist and Si₃N₄ layers; and applying an oxide etch todefine the number of trenches in the first oxide layer at locations ofthe damascene image.
 34. The method of claim 33, wherein the methodfurther includes after forming the first conductive layer removing theresist layer by a selective etch such that the first oxide layer isessentially unaltered by the selective etch.
 35. The method of claim 27,wherein depositing the core conductive layer includes selectivelydepositing aluminum.
 36. The method of claim 27, wherein depositing thecore conductive layer includes selectively depositing aluminum byplating in an ambient air environment.
 37. The method of claim 27,wherein depositing the capping layer on the core conductive layerincludes implanting titanium ions into the core conductive layer. 38.The method of claim 37, wherein the method further includes exposing thetitanium to nitrogen to form TiN.
 39. The method of claim 27, whereinthe method further includes removing at least a portion of the firstoxide layer, after depositing the capping layer on the core conductivelayer, to form an air bridge structure.
 40. A method of forming a memorydevice comprising: forming an array of memory cells in a substrate; andforming a wiring structure in the substrate coupling to the array ofmemory cells, at least a portion of the wiring structure formed by amethod including: forming a first conductive layer in an opening in amultilayer dielectric structure supported by a substrate, the firstconductive layer being an adhesion/barrier layer; depositing a seedlayer on the first conductive layer; forming a core conductive layer onthe seed layer, the core conductive layer substantially including one ormore of aluminum, silver, or gold; subjecting the core conductive layerto a H₂ plasma treatment; and depositing a capping layer on the coreconductive layer after the H₂ plasma treatment, the capping layer beinga conductive adhesion/barrier layer.
 41. The method of claim 40, whereinforming the first conductive layer includes forming a layer of arefractory metal.
 42. The method of claim 40, wherein forming the firstconductive layer includes forming a layer of a compound of nitrogen anda tantalum alloy or a compound of nitrogen and a tungsten alloy.
 43. Themethod of claim 40, wherein forming the core conductive layer includesforming the core conductive layer at a temperature ranging from roomtemperature to about 250° C.
 44. The method of claim 40, whereindepositing the capping layer includes depositing one or more materialsselected from titanium, zirconium, hafnium, or nitrides of theseelements.
 45. The method of claim 40, wherein depositing the cappinglayer includes depositing the capping layer having a thickness rangingfrom about 5 Å to about 40 Å.
 46. The method of claim 40, whereinforming the core conductive layer includes forming the core conductivelayer in the opening in the multilayer dielectric structure such thatthe core conductive layer is within one dielectric layer in themultilayer dielectric structure.
 47. The method of claim 46, whereinforming the core conductive layer within one dielectric layer includesforming the core conductive layer within a polymer layer, a foamedpolymer layer, a fluorinated polymer layer, an oxide layer, a siliconoxide layer, a fluorinated oxide layer, or an aerogel layer.
 48. Amethod of forming an electronic system comprising: providing acontroller; coupling the controller to one or more integrated circuits,at least the controller or one integrated circuit having a wiringstructure on a substrate, at least a portion of the wiring structureformed by a method including: forming a first conductive layer in anopening in a multilayer dielectric structure supported by a substrate,the first conductive layer being an adhesion/barrier layer; depositing aseed layer on the first conductive layer; forming a core conductivelayer on the seed layer, the core conductive layer substantiallyincluding one or more of aluminum, silver, or gold; subjecting the coreconductive layer to a H₂ plasma treatment; and depositing a cappinglayer on the core conductive layer after the H₂ plasma.
 49. The methodof claim 48, wherein forming the first conductive layer includes forminga layer of a refractory metal.
 50. The method of claim 48, whereinforming the first conductive layer includes forming a layer of acompound of nitrogen and a tantalum alloy or a compound of nitrogen anda tungsten alloy.
 51. The method of claim 48, wherein forming the coreconductive layer includes forming the core conductive layer at atemperature ranging from room temperature to about 250° C.
 52. Themethod of claim 48, wherein depositing the capping layer includesdepositing one or more materials selected from titanium, zirconium,hafnium, or nitrides of these elements.
 53. The method of claim 48,wherein depositing the capping layer includes depositing the cappinglayer having a thickness ranging from about 5 Å to about 40 Å.
 54. Themethod of claim 48, wherein forming the core conductive layer includesforming the core conductive layer in the opening in the multilayerdielectric structure such that the core conductive layer is within onedielectric layer in the multilayer dielectric structure.
 55. The methodof claim 54, wherein forming the core conductive layer within onedielectric layer includes forming the core conductive layer within apolymer layer, a foamed polymer layer, a fluorinated polymer layer, anoxide layer, a silicon oxide layer, a fluorinated oxide layer, or anaerogel layer.
 56. The method of claim 48, wherein providing thecontroller includes providing a processor.
 57. The method of claim 48,wherein forming the electronic system includes providing a computer. 58.The method of claim 1, wherein the method includes forming theelectronic device configured as an integrated circuit.
 59. The method ofclaim 1, wherein the method includes forming the electronic deviceconfigured as a memory device.
 60. The method of claim 1, wherein themethod includes forming the electronic device configured as part of anelectronic system.